JPS615585A - 発光半導体素子の製造方法 - Google Patents

発光半導体素子の製造方法

Info

Publication number
JPS615585A
JPS615585A JP59127092A JP12709284A JPS615585A JP S615585 A JPS615585 A JP S615585A JP 59127092 A JP59127092 A JP 59127092A JP 12709284 A JP12709284 A JP 12709284A JP S615585 A JPS615585 A JP S615585A
Authority
JP
Japan
Prior art keywords
layer
light
ohmic contact
bonding pad
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59127092A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0531317B2 (en]
Inventor
Atsushi Ichihara
淳 市原
Masahito Mushigami
雅人 虫上
Masayoshi Muranishi
正好 村西
Yuuji Ishida
祐士 石田
Haruo Tanaka
田中　治夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP59127092A priority Critical patent/JPS615585A/ja
Publication of JPS615585A publication Critical patent/JPS615585A/ja
Publication of JPH0531317B2 publication Critical patent/JPH0531317B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material

Landscapes

  • Led Devices (AREA)
JP59127092A 1984-06-19 1984-06-19 発光半導体素子の製造方法 Granted JPS615585A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59127092A JPS615585A (ja) 1984-06-19 1984-06-19 発光半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59127092A JPS615585A (ja) 1984-06-19 1984-06-19 発光半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS615585A true JPS615585A (ja) 1986-01-11
JPH0531317B2 JPH0531317B2 (en]) 1993-05-12

Family

ID=14951380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59127092A Granted JPS615585A (ja) 1984-06-19 1984-06-19 発光半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS615585A (en])

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5309001A (en) * 1991-11-25 1994-05-03 Sharp Kabushiki Kaisha Light-emitting diode having a surface electrode of a tree-like form
WO1997047042A1 (en) * 1996-06-05 1997-12-11 Sarnoff Corporation Light emitting semiconductor device
US6087680A (en) * 1997-01-31 2000-07-11 Siemens Aktiengesellschaft Led device
WO2002041410A1 (de) * 2000-11-14 2002-05-23 Osram Opto Semiconductors Gmbh Lumineszenzdiode mit hoher auskoppeleffizienz
US6430207B1 (en) 1998-09-23 2002-08-06 Sarnoff Corporation High-power laser with transverse mode filter
CN100449805C (zh) * 2006-11-08 2009-01-07 吴质朴 铝镓铟磷系化合物半导体发光器的制造方法
CN102569587A (zh) * 2007-04-09 2012-07-11 晶元光电股份有限公司 具有叠合透明电极的半导体发光装置
JP2017157869A (ja) * 2017-06-14 2017-09-07 ローム株式会社 半導体発光素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5361039A (en) * 1976-11-01 1978-06-01 Cook Electric Co Circuit protector
JPS579233A (en) * 1980-06-19 1982-01-18 Tokyo Shibaura Electric Co Battery charging device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5361039A (en) * 1976-11-01 1978-06-01 Cook Electric Co Circuit protector
JPS579233A (en) * 1980-06-19 1982-01-18 Tokyo Shibaura Electric Co Battery charging device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5309001A (en) * 1991-11-25 1994-05-03 Sharp Kabushiki Kaisha Light-emitting diode having a surface electrode of a tree-like form
WO1997047042A1 (en) * 1996-06-05 1997-12-11 Sarnoff Corporation Light emitting semiconductor device
US6087680A (en) * 1997-01-31 2000-07-11 Siemens Aktiengesellschaft Led device
US6430207B1 (en) 1998-09-23 2002-08-06 Sarnoff Corporation High-power laser with transverse mode filter
WO2002041410A1 (de) * 2000-11-14 2002-05-23 Osram Opto Semiconductors Gmbh Lumineszenzdiode mit hoher auskoppeleffizienz
CN100449805C (zh) * 2006-11-08 2009-01-07 吴质朴 铝镓铟磷系化合物半导体发光器的制造方法
CN102569587A (zh) * 2007-04-09 2012-07-11 晶元光电股份有限公司 具有叠合透明电极的半导体发光装置
JP2017157869A (ja) * 2017-06-14 2017-09-07 ローム株式会社 半導体発光素子

Also Published As

Publication number Publication date
JPH0531317B2 (en]) 1993-05-12

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Legal Events

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